Solar & Energy Storage
Solar inverters and battery energy-storage converters built on Cree SiC MOSFETs and C3D and C4D SiC Schottky diodes for high-frequency conversion.
Explore solutionAll devices are sourced through Cree/Wolfspeed's authorized channel and backed by certificates of origin and RoHS compliance documents.
Mainstream SiC MOSFET and diode types are held in regional warehouses, cutting lead times for production lines.
Our FAE team helps you compare on-resistance and current, verify SiC gate drive and plan the thermal design.
Import declarations, certificates of origin and RoHS documents accompany every shipment for smooth customs clearance.
EXW, DAP and door-to-door delivery options with tracked shipping to more than 40 countries worldwide.
C3M silicon carbide MOSFETs from 900 V to 1200 V with on-resistance from 16 mOhm, in TO-247 packages for high-frequency, high-efficiency power.
3 product seriesC3D and C4D SiC Schottky diodes from 650 V to 1200 V with zero reverse recovery, for PFC, solar inverters, rectification and freewheeling.
3 product seriesSolar inverters and battery energy-storage converters built on Cree SiC MOSFETs and C3D and C4D SiC Schottky diodes for high-frequency conversion.
Explore solutionOn-board chargers, DC-DC converters and charging stations built on Cree 1200 V SiC MOSFETs and Schottky diodes for power density and efficiency.
Explore solutionHigh-frequency, high-efficiency motor drives and industrial inverters built on Cree SiC MOSFETs and zero-recovery SiC diodes.
Explore solutionCompare Cree C3M SiC MOSFETs by blocking voltage, on-resistance, current and package to choose the right device for your converter design.
A practical method for selecting Cree C3D and C4D SiC Schottky diodes by reverse voltage, forward current and package for your application.
Gate-drive, loop-inductance and layout guidance for designing high-frequency converters around Cree C3M SiC MOSFETs with clean switching.
New stocking programs add Cree C3M SiC MOSFETs and C3D and C4D SiC Schottky diodes to regional warehouses, improving lead times for power designers.
BeiLuo's new verification bench lets FAE engineers characterize gate drive, switching loss and thermal behavior for Cree C3M SiC MOSFETs and diodes.
How 1200 V Cree SiC MOSFETs and zero-recovery Schottky diodes are reshaping charger, solar and storage efficiency and power density through 2026.
Tell us your target SiC MOSFET or diode, quantity and application. Our team responds within 24 hours with pricing, stock status and technical recommendations.
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