Cree SiC MOSFET Distributor | 900 V to 1200 V C3M Family

Genuine Cree C3M SiC MOSFETs from 900 V to 1200 V with on-resistance from 16 mOhm for solar, EV and industrial power conversion.

Read the Cree SiC MOSFET Selection Guide

Cree SiC MOSFET Overview

BeiLuo supplies genuine Cree C3M silicon carbide MOSFETs, the third-generation family that switched designers from silicon IGBTs to wide-bandgap devices in solar, EV and industrial power. A SiC MOSFET turns off cleanly with no tail current and switches far faster than silicon with lower loss, so a converter can run at a higher frequency with smaller magnetics and a smaller cooling system, which raises power density. The C3M family spans 900 V and 1200 V ratings with on-resistance from 16 milliohm, and packages from the three-lead TO-247-3 to the four-lead TO-247-4 that adds a dedicated driver-source pin to decouple the gate loop and reduce ringing. Some devices are rated to a 175 °C maximum junction temperature, which lets the designer shrink the heatsink, and the robust body diode with low reverse-recovery charge simplifies the freewheeling path in a bridge. Typical uses include solar and storage inverters, EV on-board chargers and DC-DC converters, motor drives and switched-mode power supplies. Every device BeiLuo ships is factory-traceable and includes an import declaration, a certificate of origin and a RoHS compliance file. Our FAE team helps you compare on-resistance, current and package, choose a gate-drive scheme and verify the thermal path. Selecting a Cree SiC MOSFET means matching the voltage class, current and hot on-resistance to your converter, then confirming the gate drive and loop inductance for clean switching.

Cree SiC MOSFET Product Range

In-stock SiC MOSFET series available now, each with import documentation and FAE support. Click a model for full specifications and purchase information.

ModelBlocking VoltageRDS(on)Current RatingPackageTj max
C3M0016120K1200 V16 mΩ115 ATO-247-4175 °C
C3M0021120K1200 V21 mΩ100 ATO-247-4175 °C
C3M0065090D900 V65 mΩ36 ATO-247-3150 °C

Frequently Asked Questions

How do I read the Cree SiC MOSFET table?

Blocking Voltage sets the voltage class, Current Rating the current and RDS(on) the conduction loss, while the Package decides the gate-loop inductance and the assembly method. Tj max confirms the thermal headroom.

On-resistance rises with temperature, so check the hot value for cooling.

Open the C3M0016120K detail page

Why choose a SiC MOSFET over a silicon IGBT?

SiC switches faster with far lower switching loss and has no tail current, so a converter can run at higher frequency with smaller magnetics and a smaller cooling system. That raises efficiency and power density in chargers, solar and storage.

At low frequency and high current, a silicon IGBT can still be more economical.

Discuss a SiC versus Si comparison

What is the advantage of the four-lead package?

The four-lead TO-247-4 package adds a dedicated driver-source pin, which removes the source inductance from the gate loop and reduces ringing and switching loss. That makes fast SiC switching easier to control.

For lower-cost builds, the three-lead TO-247-3 is available.

Read the gate-drive notes

Are the devices genuine and documented?

Every Cree SiC MOSFET BeiLuo ships is factory-traceable and includes an import declaration, a certificate of origin and a RoHS compliance file. Mainstream models are held in regional warehouses.

Click a model for stock status, or request a quote for current lead time.

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Documentation

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Request pricing, samples or technical consultation for Cree SiC MOSFET products. Our FAE team responds within one business day.

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