Cree SiC MOSFET Distributor | 900 V to 1200 V C3M Family
Genuine Cree C3M SiC MOSFETs from 900 V to 1200 V with on-resistance from 16 mOhm for solar, EV and industrial power conversion.
Cree SiC MOSFET Overview
BeiLuo supplies genuine Cree C3M silicon carbide MOSFETs, the third-generation family that switched designers from silicon IGBTs to wide-bandgap devices in solar, EV and industrial power. A SiC MOSFET turns off cleanly with no tail current and switches far faster than silicon with lower loss, so a converter can run at a higher frequency with smaller magnetics and a smaller cooling system, which raises power density. The C3M family spans 900 V and 1200 V ratings with on-resistance from 16 milliohm, and packages from the three-lead TO-247-3 to the four-lead TO-247-4 that adds a dedicated driver-source pin to decouple the gate loop and reduce ringing. Some devices are rated to a 175 °C maximum junction temperature, which lets the designer shrink the heatsink, and the robust body diode with low reverse-recovery charge simplifies the freewheeling path in a bridge. Typical uses include solar and storage inverters, EV on-board chargers and DC-DC converters, motor drives and switched-mode power supplies. Every device BeiLuo ships is factory-traceable and includes an import declaration, a certificate of origin and a RoHS compliance file. Our FAE team helps you compare on-resistance, current and package, choose a gate-drive scheme and verify the thermal path. Selecting a Cree SiC MOSFET means matching the voltage class, current and hot on-resistance to your converter, then confirming the gate drive and loop inductance for clean switching.
Cree SiC MOSFET Product Range
In-stock SiC MOSFET series available now, each with import documentation and FAE support. Click a model for full specifications and purchase information.
| Model | Blocking Voltage | RDS(on) | Current Rating | Package | Tj max |
|---|---|---|---|---|---|
| C3M0016120K | 1200 V | 16 mΩ | 115 A | TO-247-4 | 175 °C |
| C3M0021120K | 1200 V | 21 mΩ | 100 A | TO-247-4 | 175 °C |
| C3M0065090D | 900 V | 65 mΩ | 36 A | TO-247-3 | 150 °C |
Frequently Asked Questions
How do I read the Cree SiC MOSFET table?
Blocking Voltage sets the voltage class, Current Rating the current and RDS(on) the conduction loss, while the Package decides the gate-loop inductance and the assembly method. Tj max confirms the thermal headroom.
On-resistance rises with temperature, so check the hot value for cooling.
Why choose a SiC MOSFET over a silicon IGBT?
SiC switches faster with far lower switching loss and has no tail current, so a converter can run at higher frequency with smaller magnetics and a smaller cooling system. That raises efficiency and power density in chargers, solar and storage.
At low frequency and high current, a silicon IGBT can still be more economical.
What is the advantage of the four-lead package?
The four-lead TO-247-4 package adds a dedicated driver-source pin, which removes the source inductance from the gate loop and reduces ringing and switching loss. That makes fast SiC switching easier to control.
For lower-cost builds, the three-lead TO-247-3 is available.
Are the devices genuine and documented?
Every Cree SiC MOSFET BeiLuo ships is factory-traceable and includes an import declaration, a certificate of origin and a RoHS compliance file. Mainstream models are held in regional warehouses.
Click a model for stock status, or request a quote for current lead time.
Documentation
Need a quote or samples?
Request pricing, samples or technical consultation for Cree SiC MOSFET products. Our FAE team responds within one business day.
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