Cree SiC MOSFET
SiC MOSFET - Cree SiC MOSFET Distributor | 900 V to 1200 V C3M FamilyKey parameters
- 900 V and 1200 V blocking voltage
- On-resistance from 16 mOhm
- C3M third-generation SiC technology
- TO-247-3 and TO-247-4 packages
- Up to 175 °C maximum junction temperature
Typical models
Applications
- Solar and energy-storage inverters
- EV on-board chargers and DC-DC
- Motor drives and industrial inverters
- Switched-mode power supplies
- High-voltage DC-DC converters
Advantages
- Faster switching with lower loss than silicon
- Four-lead package reduces gate ringing
- Robust body diode with low recovery charge
- High junction temperature for smaller heatsinks
Complementary parts
3 series in stock
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